KSD471A transistor (npn) features power dissipation p cm: 0.8 w (tamb=25 ) collector current i cm: 1 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic=10ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo ic=100a, i b =0 5 v collector cut-off current i cbo v cb =30v, i e =0 0.1 a dc current gain h fe v ce =1v, i c =100ma 70 400 collector-emitter saturation voltage v ce (sat) i c =1a, i b =0.1a 0.5 v base-emitter saturation voltage v be (sat) i c =1a, i b =0.1a 1.2 v transition frequency f t v ce =6v, i e =0, f=1mhz 100 mhz collecter output capacitance cob v ce =6v, i e =0, f=1mhz 25 pf classification of h fe(1) rank o y g range 70-140 120-240 200 - 400 1 2 3 to-92 1. emitter 2. base 3. collector KSD471A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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